Control of Optical and Electrical Characteristics of Ba _x Sn_1-x O_2-x Films with Bandgap Engineering as a Function of Ba:Sn Ratio

Herein, we report bandgap engineering of alloyed Ba x Sn1-x O2-x (BSO) to modulate the optical andelectrical propertiesas a function of Ba:Sn ratio. The BSO nanoparticles were synthesizedat 50 degrees C and annealed at 200 degrees C. It was found that the bandgapand electron mobility of BSO films decrease with increasing the Bacontent in BSO, indicating that the electron mobility of the BSO-basedelectron transport layers in optoelectronic devices can be easilycontrolled by adjusting the Ba:Sn ratio. The bandgap and electronmobility of BSO films ranged from 3.02 to 3.71 eV and from 5.2 x10(-3) to 9.8 x 10(-3) cm(2)/V, respectively.