Charge Relaxation in Chalcogenide Films under Electron Beam Irradiation

We studied processes of charge relaxation after point irradiation of AsxSe100-x and Ge(x)Se(100-x )chalcogenide films with an electron beam. Two relaxation processes were found in the dose range from 2,05 * 10(2)( )mu Ccm(- 2) to 9,3 * 10(7) mu Ccm(- 2). The relaxation times of these processes differ by more than 10(3) times. It is shown that the first relaxation process is associated with the relaxation of the positive charge in the near-surface region of irradiated film. The second, slower relaxation process is due to the process of the formation of a negative charge layer inside the film and electron-induced mass transport under the action of an internal electric field.