Strain engineering tunable electronic conductivity in two- dimensional γ-GeSe

The strain engineering tunable electronic properties of two-dimensional γ-GeSe were systemically investigated by using density-functional calculations. Results indicate the applied uniaxial strains can lead to band alternations to form a new CBM due to the active p orbitals of Ge atoms. Additionally, the isotropic distribution of electrons effective mass turns to be anisotropic under strain engineering. We demonstrated pristine γ-GeSe has a high electron mobility which can be turned on/off (415.1/0–25 cm2s−1v−1) through applying strains. These interesting findings have provided an improved understanding of the controllable electronic properties in stretchable γ-GeSe monolayer showing great potential applications in strain-response electronic devices.