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Design Limitations in Oxide-Based Memristive Ternary Content Addressable Memories.

Leon Brackmann,Tobias Ziegler,Atousa Jafari,Dirk J. Wouters,Mehdi B. Tahoori,Stephan Menzel

ISCAS（2023）

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Key words
Ternary Content Addressable Memory (TCAM), Memristive Devices, Variability, Matchline Leakage, Valence Change Mechanism (VCM)
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