Recent progress in low-temperature CVD growth of 2D materials

OXFORD OPEN MATERIALS SCIENCE(2023)

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摘要
Two-dimensional (2D) materials have emerged as a promising class of materials with unique physical and chemical properties that offer exciting prospects for various applications. Among all the synthesis methods, chemical vapor deposition (CVD) techniques have demonstrated great advantages in the large-scale production of 2D materials with a controlled thickness. One of the main challenges in the growth of 2D materials is the need for high temperatures and crystalline substrates, which restrict the scalability and compatibility of 2D materials with existing manufacturing processes, due to the high thermal budget and the necessity to transfer the 2D films to secondary substrates. Low-temperature growth methods for 2D materials have the potential to overcome this challenge and enable the integration of 2D materials into a wide range of devices and applications. In recent years, there have been substantial efforts to develop low-temperature growth techniques for different 2D materials, including graphene, hexagonal boron nitride and transition metal dichalcogenides. These methods include thermal CVD, plasma-enhanced CVD, atomic layer deposition and metal-organic chemical vapor deposition. This review not only discusses the progress in the growth but also highlights the applications of low-temperature-grown 2D materials in various fields, such as field effect transistors, sensors, photodetectors, catalysts, batteries and supercapacitors.
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关键词
chemical vapor deposition, 2D materials, low-temperature growth, PECVD, atomic layer deposition, MOCVD
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