FDSOI for cryoCMOS electronics: device characterization towards compact model

M. Casse, B. Cardoso Paz, F. Bergamaschi,G. Ghibaudo, F. Serra, G. Billiot, A. G. M. Jansen, Q. Berlingard, S. Martinie, T. Bedecarrats,L. Contamin, A. Juge,E. Vincent,P. Galy,M. A. Pavanello,M. Vinet,T. Meunier, F. Gaillard

2022 INTERNATIONAL ELECTRON DEVICES MEETING, IEDM（2022）

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摘要

We present a status of FDSOI transistors electrical characterization for very low temperature operation. We highlight in particular singular transport and thermal effects occurring at low T. We also present the physical and analytical models associated with various characteristic electrical parameters, paving the way towards cryogenic compact models.

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关键词

analytical models,characteristic electrical parameters,cryoCMOS electronics,cryogenic compact models,device characterization,electrical characterization,FDSOI transistors,low temperature operation,physical models,singular transport,thermal effects

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