First Demonstration of GAA Monolayer-MoS2 Nanosheet nFET with 410 mu A/mu m ID at 1V V-D at 40nm gate length

This work demonstrates the first successful integration of monolayer MoS2 nanosheet FET in a gate-all-around configuration. At a gate length of 40nm, the transistor exhibits a remarkable I-ON similar to 410 mu A/mu m at V-DS = 1V, achieved with a monolayer channel, similar to 0.7nm thin. The FET has a large I-ON/IOFF>1E8, positive V-TH similar to 1.4 V with nearly zero DIBL. Higher drive current can be achieved through stacking of multiple channel layers. We propose here a fully integrated flow and we detail the feasibility of the most critical modules: stack/channel preparation, fin patterning, inner spacer, channel release, contact. The successful demonstration of MoS2 NS with high performance and of the stacked NS modules further clarifies the value proposition in 2D materials for transistor scaling.