Power and polarization-dependent photoresponse of quasi-one-dimensional In 4 Se 3

Here, the dependence of photoresponse of In 4 Se 3 on the power and polarization of the incident laser are discussed. Significant increase in the photocurrent, versus applied voltage, with increase in laser power suggests fabrication of In 4 Se 3 -based phototransistor is possible. A strong light polarization-dependent behavior of the photocurrent of In 4 Se 3 , with an extrapolated dichroic ratio of ~ 1.55:1, is also observed, which is consistent with the anisotropic band structure of In 4 Se 3 . These results, consistent with earlier reports, are important as they open new pathways for efficient integration of logic and sensing, which is key to robotics applications. Thus, In 4 Se 3 , an n-type quasi-one-dimensional semiconductor with a bandgap comparable to that of silicon, is a promising material for opto-electronic applications. Graphical abstract SPCM image of an In 4 Se 3 phototransistor