Enhanced resistive switching characteries in HfOx memory devices by embedding W nanoparticles

Resistive random access memory (RRAM) has lots of advantages that make it a promising candidate for ultrahigh-density memory applications and neuromorphic computing. However, challenges such as high forming voltage, low endurance, and poor uniformity have hampered the development and application of RRAM. To improve the uniformity of the resistive memory, this paper systematically investigates the HfOx-based RRAM by embedding nanoparticles. In this paper, the HfOx-Based RRAM with and without tungsten nanoparticles (W NPs) is fabricated by magnetron sputtering, UV lithography, and stripping. Comparing the various resistive switching behaviors of the two devices, it can be observed that the W NPs device exhibits lower switching voltage (including a 69.87% reduction in V-forming and a reduction in V-set/V-reset from 1.4 V/-1.36 to 0.7 V/-1.0 V), more stable cycling endurance (>10(5) cycles), and higher uniformity. A potential switching mechanism is considered based on the XPS analysis and the research on the fitting of HRS and LRS: Embedding WNPs can improve the device performance by inducing and controlling the conductive filaments (CFs) size and paths. This thesis has implications for the performance enhancement and development of resistive memory.