Optical and electrical properties of Sb-doped -Ga2O3 crystals grown by OFZ method

Sb-doped S-Ga2O3 crystals were grown using the optical floating zone (OFZ) method. X-ray diffraction data and X-ray rocking curves were obtained, and the results revealed that the Sb-doped single crystals were of high quality. Raman spectra revealed that Sb substituted Ga mainly in the octahedral lattice. The carrier concentration of the Sb-doped single crystals increased from 9.55 X 1016 to 8.10 X 1018 cm-3, the electronic mobility depicted a decreasing trend from 153.1 to 108.7 cm2 & BULL; V-1 & BULL; s-1, and the electrical resistivity varied from 0.603 to 0.017 & omega; & BULL; cm with the increasing Sb doping concen-tration. The un-doped and Sb-doped S-Ga2O3 crystals exhibited good light transmittance in the visible region; however, the evident decrease in the infrared region was caused by increase in the carrier concentration. The Sb-doped S-Ga2O3 single crystals had high transmittance in the UV region as well, and the cutoff edge appeared at 258 nm.