Orientation-Dependent Atomic-Scale Mechanism of β-Ga_2O_3 Thin Film Epitaxial Growth
arXiv (Cornell University)(2023)
摘要
β-Ga_2O_3 has gained intensive interests of
research and application as an ultrawide bandgap semiconductor. Epitaxial
growth technique of the β-Ga_2O_3 thin film
possesses a fundamental and vital role in the
Ga_2O_3-based device fabrication. In this work,
epitaxial growth mechanisms of β-Ga_2O_3 with
four low Miller-index facets, namely (100), (010), (001), and
(201), are systematically explored using large-scale
machine-learning molecular dynamics simulations at the atomic scale. The
simulations reveal that the migration of the face-centered cubic stacking O
sublattice plays a predominant role in rationalizing the different growth
mechanisms between (100)/(010)/(001) and (201) orientations. The
resultant complex combinations of the stacking faults and twin boundaries are
carefully identified, and shows a good agreement with the experimental
observation and ab initio calculation. Our results provide useful insights into
the gas-phase epitaxial growth of the β-Ga_2O_3
thin films and suggest possible ways to tailor its properties for specific
applications.
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关键词
epitaxial growth,thin film,orientation-dependent,atomic-scale
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