Experimental Analysis of HfO2/X ReRAM devices by the Capacitance Measurements

The main objective of this work is to present an analysis of the switching properties in Resistive Random-Access-Memory devices through the capacitance measurements of the metal-insulator-metal structure. The analysis was carried out in two devices with different insulating layers, one composed of H-plasma-treated HfO2 and the other with a stoichiometric HfO2. The device with a higher quantity of oxygen vacancy related defects in the insulator (HfO2 w/trt) presents a wider spread of the capacitance with the application of a range of varying pulse widths. An increase in the capacitance from 3.904 to 3.917 pF/mu m(2) was observed for the same device when it was subjected to a 144 mu s pulse width, demonstrating a conductance quantization required for the application in in-memory computing systems.