Effect of metallurgical step-graded quantum barrier on the performance of InGaN-based laser diode

In this paper, a metallurgical step-graded uniform quantum barrier (QB) laser diode (LD) structure is proposed, which leads to performance enhancement in terms of reduced electron seepage current, reduced threshold current, diminished polarization charges at interfaces, and increased laser power, hole injection efficiency, optical confinement etc. The proposed LD structure demonstrated the best results among all the three structures considered in this study. The laser output power was increased from 118 mW to 160 mW in the metallurgical step-graded uniform QB LD structure as compared to the ungraded QB reference structure. The optical confinement was improved from 0.94% to 1.09% in the photon-generating region. The electron potential barrier height has increased from 191 meV to 242 meV, while the hole potential barrier height has decreased from 133 meV to 116 meV at 120 mA injection current. In addition, the electron seepage flux has reduced from 1374 A cm-2 to 768 A cm-2 at 120 mA injection current.