Nanoarchitectonics of binary semiconductor Sb–Y for the application of phase-change memory device

This work systematically investigates the improvement in phase change properties and crystallization mechanism of Sb films after Y doping. Compared with the pure Sb thin films, Sb 51 Y 49 has a higher crystallizing temperature (203 ℃) and longer failure time (766 s), indicating that Y doping can enhance the thermal stability of the material in the amorphous state effectively. Y exists in an amorphous state and has an inhibitory effect on grain growth, resulting in smaller grain sizes in Y-doped Sb films. The crystallization mechanism was investigated using the Johnson–Mehl–Avrami model, and the crystallization mechanism of the Sb films before and after Y-doping is unchanged and always dominated by growth, a property that is favorable for achieving fast phase transitions. The phase change cells based on Sb 51 Y 49 films exhibit a lower energy consumption (3.5 × 10 –11 J) than the conventional Ge 2 Sb 2 Te 5 material. The findings demonstrate the potential of Y-doped Sb as a phase change material with excellent crystallization rate and energy consumption performance.