Facile one-pot electropolymerization of novel Cu complexed conducting polymer for Resistive Random Access Memory

•The active layer synthesized by the one-pot electropolymerization method.•The Pt/PPy-Cu/Pt ReRAM device exhibits excellent resistive memory performance.•The existence of Cu (II) is beneficial to keeping stable resistive memory performance.•The conductive mechanism mainly follows the SCLC effect and Schottky emission.•The PPy-Cu composite film has potential value as a low-energy-consumption material.