Investigation of resistive switching behaviors of cuprous phosphide thick film

In order to find high-performance memristor materials. we prepared cuprous phosphide (Cu3P) thick film by a simple chemical reaction method and studied its resistive switching properties. We investigated the effects of device structure, voltage sweep rate and electrode material on the resistive switching performance. For devices employing various electrode materials, negligible disparities were observed in transition voltage (< 0.35 V), endurance (2 x10(3)), and retention time (> 4 x10(4) s). However, substantial differences were observed in operational speed and Off/On ratio. Specifically, device utilizing stainless steel (SS) electrode exhibited the highest operational speed (5000 V/s), while that employing nickel electrode demonstrated the largest Off/On ratio (2.1 x10(4)). We also observed that the device status self-healed after a voltage sweep operation. Finally, we discussed electrical switching mechanism. Our work enriches the resistive switching performance and mechanism of Cu3P bulk materials, hoping to provide a reference for the research of memristor materials.