Improving Dielectric Constant and Residual Stress in Metal-Insulator-Metal Capacitors Using Different Stacked Thick Dielectric Materials

This study aims to analyze and compare the characteristics of Metal-Insulator-Metal (MIM) capacitors, focusing on the effect of the stacking selection of thick dielectric materials, for future applications requiring robustness to high voltages and temperatures. The 300 nm-thick dielectric stacks under investigation include SiO 2 and Si 3 N 4 materials deposited using plasma-enhanced chemical vapor deposition (PECVD) at a high temperature (300°C), as well as Al 2 O 3 deposited through reactive sputtering at room temperature. The experimental results presented in this work highlight the importance of the stacking choice of these dielectric materials for minimizing the residual stress and the temperature coefficient of capacitance (TCC) and enhancing the overall dielectric constant. These factors contribute to achieving increased capacitance density, with mechanical and electrical resistance to harsh conditions.