Fully Coupled Electromigration Modeling Using Peridynamics

With the development of microelectronics, modeling and understanding of electromigration became unavoidable for ensuring their reliability. This study presents a fully coupled peridynamic (PD) model to simulate electromigration and void formation. The PD form of the mass conservation equation of the atom includes the coupling terms arising from diffusion strain due to electromigration, thermal strain, and mechanical strain. The numerical results concern the simulation of electromigration in a fully constrained metal line and void nucleation and growth in a stress-free (unconstrained) metal line. This approach accurately captures the previous results and experimental measurements.