Phosphorus escaping phenomena during the growth of InP crystal by in-situ liquid-encapsulated Czochralski method and P-rich-related defects in InP crystal

This paper investigates the phenomenon of phosphorus (P) escaping and its influence on the growth of InP crystal by in-suit liquid-encapsulated Czochralski (LEC) method. It was found that when the seed was inserted into the InP melt to start crystal growth, P bubbles appeared on the melt surface near the edge of the crucible and moved from the edge to the center. The higher melt temperature is the reason of the bubbles formation, and the natural convection of melt provides driving force for the bubbles motion. This phenomenon has a negative effect on the growth of InP crystal. The generation of the P bubbles can be suppressed by optimizing the melt temperature. P-rich-related pores were found in InP crystals grown in P-rich melt. The generation mechanism and distribution characteristics of P-pores were presented. It was found that the P-rich degree of InP melt and the shape of solid–liquid interface were the key factors affecting the formation and distribution of P-pores in the crystal.