Investigation of resistive switching dynamics in e-beam evaporated P-type tin-oxide based cross-cell memristor for synaptic and memory application

•The Crystal Structure and Element Composition of E-beam Evaporated P-type Tin-Oxide.•The investigation of gradual and abrupt resistive switching dynamics E-beam Evaporated Tin-Oxide-based memristor.•Performance analysis of E-beam evaporated P-type Tin-Oxide Based Memristor Cross-cell Device for neuromorphic application.•Performance analysis of E-beam evaporated P-type Tin-Oxide Based Memristor Cross-cell Device for memory application.•Read Voltage and Pulse Width Optimization for Cross-Cell Memristor synaptic device.