Temperature Effects on the Sensitivity of Gamma MOSFET Dosimeters

I. Ruiz-García, P. Martín-Holgado, P. Escobedo, Y. Morilla, A. J. Palma,M. A. Carvajal

2023 IEEE 33rd International Conference on Microelectronics (MIEL)（2023）

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摘要

This study investigates the relationship between sensitivity and temperature during irradiation in MOSFET dosimeters. Three samples of the commercial lateral p-channel MOSFET 3N163 were exposed to Cobalt-60 radiation at temperatures ranging from 8 to 75 °C. Results indicate that no thermal dependence was observed up to a dose of 8 Gy.

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