Synthesis and Thermoelectric Characterization of Sb-Doped Cu 2 Se by Mechanical Alloying and Solid-State Reaction

In this study, Sb-doped Cu 2 Se 1− x Sb x ( x = 0, 0.005, 0.01, 0.015, 0.02, and 0.025) compounds were synthesized using mechanical alloying combined with a solid-state reaction technique. The crystal structure of the Sb-doped samples was a mixture phase between α -Cu 2− δ Se and β -Cu 2− δ Se, and a minor phase of Cu 3 Se 2 , Cu 2 O, and excess Sb in high-doping-level samples. The electrical properties of Sb-doped samples were improved when compared to the undoped sample by the enhancement of carrier concentration via the creation of an acceptor level after Sb doping. The thermal conductivity decreased with increasing x and reached the lowest value in the Cu 2 Se 0.98 Sb 0.02 sample. As a result, the sample with an Sb-doped level of 0.02 showed the highest ZT value of 1.22 at 823 K.