Terahertz Hot-Electron Bolometric Detectors Based on Metal/Black-AsP/Graphene FETs: Proposal and Evaluation

2023 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)(2023)

引用 0|浏览1
暂无评分
摘要
A novel terahertz (THz) hot-electron bolometric detector based on a graphene field effect transistor with the blackAsP gate barrier layer (BL) is proposed and evaluated theoretically. By providing a relatively low energy barrier for the emitted electrons the b-AsP BL helps reinforce the THz radiation absorption and the intensification of the electron heating and thermionic emission associated with the resonant excitation of plasmonic oscillations in the graphene channel.
更多
查看译文
关键词
AsP-C/int,BL,black-gate barrier layer,electron heating,emitted electrons,graphene channel,graphene field effect transistor,low energy barrier,metal-black-AsP-graphene FET,plasmonic oscillations,terahertz hot-electron bolometric detectors,thermionic emission,THz hot-electron bolometric detectors,THz radiation absorption
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要