Study of Ferroelectric HfO2-ZrO2 Superlattice Poly-Si Junctionless Nanosheet Gate-all-around Field-effect-transistor and CMOS Inverter

In this study, the SL HZO GAAFET were fabricated and compared with the HZO GAAFET. The SL HZO device showed higher Ion/Ioff, lower SS, smaller DIBL, and higher maximum G m• Additionally, the n- and p-type SL HZO GAAFETs were used to demonstrate the feasibility of a CMOS inverter with complete switching functionality. These results suggest that SL HZO GAAFETs hold promise for future nanoelectronics applications.