New Insights into the Memory Window Estimation in FeFET from a Dynamic Perspective

In this work, the impact of the dynamic process during the falling edge of program/erase (P/E) pulses and relaxation stage on the memory window (MW) of FeFET is investigated. With a new perspective, we observe non-trivial trends of MW with different values of remnant polarization $(P_{\mathrm{r}})$ and relative permittivity $(\varepsilon_{\mathrm{F}\mathrm{E}})$ , which differs from their monotonic effect on the coercive voltage $(V_{\mathrm{c}})$ of the ferroelectric layer. Furthermore, simulation results show different $V_{\mathrm{t}\mathrm{h}}$ values for varying fall times of P/E pulses, which have been verified through experimental observations. Our results offer a novel perspective for accurately evaluating the MW of FeFET and provide design strategies for device optimization.