A Mixed De-Embedding Method for On-Wafer Differential Devices Using One Line Standard

This work presents a mixed de-embedding method for on-wafer differential devices combining both features of equivalent-circuit-based and cascade-based techniques. Firstly, lumped-element models of embedded structures are extracted separately based on EM simulation, which are further cascaded to build the model of line standard and optimized. Furthermore, an optimized model is used to de-embed measurement results. For demonstration, a 2:1 differential transformer fabricated with GaAs-based integrated passive device (IPD) technology is designed and simulated. The results show that the proposed method enables accurate de-embedding up to 80GHz.