High-Endurance (>10¹¹cycles) and Thermally-Stable Sub-100nm TiO2 Channel FeFET for Low-Power Memory Centric 3D-LSI Applications

We present high-performance and highly-reliable HfO 2 -based ferroelectric FETs (FeFETs) using thermally-stable TiO 2 channels. Our device with the channel length $< 100\text{nm}$ showed high-speed and low-voltage program/erase $(100\mathrm{n}\sec/\pm 3\mathrm{V})$ . We also confirmed whole-channel switching, which overcomes the difficulty in erase operation of n-type oxide semiconductor channel FeFETs. Furthermore, excellent endurance over $10^{11}$ cycles is demonstrated, making TiO 2 -FeFET promising candidate for future low-power memory centric 3D-LSI applications.