A 110-160GHz Wideband Power Amplifier in 0.13μm SiGe BiCMOS with 14.12dBm Psat and 9.26% PAE

This paper presents a single-ended wideband power amplifier (PA) in 130nm SiGe process, which achieves a wide operating frequency range, while also exhibiting considerable saturated output power and efficiency. In order to extended bandwidth, low-Q impedance matching networks are adopted. Cascode topology and gain-boosting technology are also employed to improve the efficiency and saturated output power, respectively. Verified by the EM simulation of passive components and post-simulation, the PA operates from 110GHz to 163GHz (3dB bandwidth) with a peak gain of 24dB at 140GHz. Consuming DC power of 0.26W from 2.8-V supply voltage, the PA achieves peak output power of 14.12 dBm at 150GHz and competitive power-added-efficiency (PAE) of 9.2% over the bandwidth from 144GHz to 156GHz. The chip occupies an area of 0.26 mm ² excluding the pads.