Considering physical mechanisms and geometry dependencies in 14nm FinFET circuit aging and product validations

S. W. Pae,H. C. Sagong,C. Liu,M. J. Jin,Y. H. Kim,S. J. Choo,J. J. Kim,H. J. Kim,S. Y. Yoon,H. W. Nam,H. W. Shim,S. M. Park,J. K. Park,S C. Shin,J. W. Park

2015 IEEE International Electron Devices Meeting (IEDM)（2015）

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摘要

We report the extensive 14nm FinFET reliability characterization work and provide physical mechanisms and geometry dependencies. BTI, HCI variability related to #of Fin used in design along with self-heat considerations are critical for product design and qualifications. We show that along with increased AFs and optimized product HTOL stress conditions, 5–10x more efficiency in time has been achieved. In addition, external mechanical strain on Fin reliability will be discussed.

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关键词

physical mechanisms,geometry dependencies,FinFET circuit aging,product validations,reliability,BTI,HCI variability,self-heat considerations,external mechanical strain,size 14 nm

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