Laser-Assisted Bonding Prototype Equipment for Hybrid Integration of Silicon Photonic Circuits

Hybrid integration (HI) in the field of photonics is currently gaining increased attention motivated by ability of photonic integrated circuits (PICs) to combine an increasing variety of optical functions on a single chip-level, allowing to reduce cost, and drastically miniaturize the optical systems [1]. PICs will inevitably introduce a paradigm shift in the use of photonics in applications such as wearable electronics, low-dissipation power datacom, and advanced sensing. Despite many important advances, photonic HI technology requires significant development to attain the yield, the throughput, and versatility required to engage with emerging applications. To this end, one of the most promising approaches to co-integrate complimentary photonic chips is laser-assisted bonding (LAB), owing to low thermal-induced stress and warpage to the bonded surfaces [2]. Fig. 1 Time-temperature diagrams, IR&thermal images of LAB process and microscopy images of solder joints (bonds) on PIC surface.