A Potential Candidate Material for Quantum Anomalous Hall Effect: Heterostructures of Ferromagnetic Insulator and Graphene

Discovery of novel topological materials have motivated tremendous research owing to their peculiar energy bands and potential fundamental and practical prospects. In contrast to conventional nonmagnetic topological insulators (TIs), new type of magnetic TIs, such as Cr2Ge2Te6, revealed a quantum Hall effect (QHE) at zero magnetic field. The phenomenon is called anomalous QHE. In the magnetic TIs showing QAHE, the interaction of spontaneous magnetism with conducting surface states opens an insulating band gap at the Dirac points by breaking the time-reversal symmetry. In contrast to inducing the phenomenon of QHE through spontaneous magnetism by chemical doping, the alternative suitable option is the heterostructure engineering of 2D Dirac materials with semiconductor magnetic insulators. In this study, we first time investigate the phenomenon of QAHE in semiconducting magnetic insulator Cr2Ge2Te6 by proposing its bulk and monolayer heterostructure with graphene by the first-principles calculations. We employed density functional theory to compute electronic properties of Cr2Ge2Te6 and its heterostructure with graphene. The exchange-correlation in view of meta generalized gradient approximations with tight binding method reveal the results for bulk Cr2Ge2Te6 are close to the experimental values. The maximum achieved energy gap in the heterostructure is up to 5 meV.