(Invited) Catalytic Growth of Width-Controlled Single Atomic Layer MoS₂ Sub-10nm Nanoribbons

For the next generation materials for optoelectronics, quantum computing, communication and sensing, single atomic layer semiconducting nanoribbons offer additional degree of freedoms for engineering their properties. However, direct width-controlling synthesis of TMD nanoribbons, especially for the appealing width range below 30 nm, remains challenge. Therefore, developing facile methods for their direct and controllable synthesis is of central importance. We present a new growth method for single and double atomic layer of MoS 2 nanoribbons with width down to sub-10 nm. Nanoribbons are grown via precipitation from the Ni-contained composite nanoparticles via vapor-liquid-solid mechanism in which the nanoparticle diameter also controls the width of nanoribbon. We also present preliminarily studies on width-dependent properties of the nanoribbons, which evidence their potential application in the quantum electronics, particularly as a single electron transistor and single photon emitter.