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Write-Once-Read-Many-Times Nonvolatile Memory Characteristics of Sol-Gel Hafnium Zirconium Oxide

IEEE Transactions on Electron Devices(2024)

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Key words
Zirconium,Grippers,Hafnium oxide,Resistance,Switches,Voltage measurement,X-ray scattering,Hafnium zirconium oxide,resistive switching (RS),sol-gel,write-once-read-many-times (WORM)
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