Spin injection, relaxation, and manipulation of carriers in GaN-based semiconductors

Gallium nitride-based (GaN-based) semiconductors have gained considerable interest from researchers in the community of semiconductor spintronics owing to their electric-field controllable spin-orbit coupling and because their Curie temperature is higher than room temperature. Spin injection, relaxation, and manipulation of itinerant electrons and holes are critical issues in developing spintronic semiconductor devices. Herein, the research progress on spin injection, relaxation, and manipulation of the carriers in GaN-based semiconductors is reported and investigated using a time-resolved Kerr rotation spectrum and spin-valve electrical measurements. The fine band structure, spin-orbit coupling, spin relaxation mechanism, and spin manipulation in GaN-based semiconductors are discussed in detail. Finally, the research on developing GaN-based spintronic semiconductor devices is summarized, and the application prospect is discussed herein.