A $D$-Band Wideband Low-Noise Amplifier Adopting Pseudo-Simultaneous Noise and Input Matched Dual-Peak $G_\text{max}$-Core

This article presents a high-gain and wideband $D$ -band low-noise amplifier (LNA) adopting a proposed wideband pseudo-simultaneous noise-and input-matched (p-SNIM) dual-peak (DP) maximum achievable gain ( $G_\text{max}$ )-core. For a transmission line (TL)-based DP $G_\text{max}$ -core, the p-SNIM condition is satisfied by adjusting the stability factor ( $K_f$ ) without requiring additional components. Comprehensive analysis of the DP $G_\text{max}$ -core is performed to investigate the unique behaviors of input admittance for simultaneous conjugate matching ( $Y_{\text{in}}^*$ ) and optimal admittance for minimum noise figure (NF) ( $Y_{n\text{opt}}$ ) as a function of $K_f$ , which is fully exploited to implement the wideband p-SNIM DP $G_\text{max}$ -core. Moreover, we present the design procedure of a proposed dual-frequency inter-stage matching network that enables the wideband multistage LNA implementation. Implemented in a 40-nm CMOS technology, the $D$ -band three-stage LNA achieves a peak power gain of 16.3 dB, a 3-dB bandwidth of 24 GHz, and a minimum NF of 4.9 dB while dissipating only 16.1 mW.