Studying the Optoelectronic Properties of NaSnCl3 Solar PV Material: A Step Towards Sustainable Development

The halide perovskites appear as new-generation semiconductors in the last few years. The goal of the current work is to govern the optoelectronic characteristics of NaSnCl3 by using DFT which is incorporated in Wien2k code. The Tran-Blaha modified Becke Johnson exchange–correlation potential (TB-mBJ) is used for all simulation work in order to determine the optoelectronic properties. The compound band gap value of 0.91 eV demonstrates its usefulness in the field of multi-junction solar cells. Low reflection and high absorption coefficients revealed by an investigation of optical properties demonstrate, this material’s suitability for optoelectronic applications.