Highly Linear and Symmetric Analog Neuromorphic Synapse Based on Metal Oxide Semiconductor Transistors with Self‐Assembled Monolayer for High‐Precision Neural Network Computation (Adv. Electron. Mater. 3/2023)

Seongmin Park,Suwon Seong,Gilsu Jeon,Wonjae Ji,Kyungmi Noh,Seyoung Kim,Yoonyoung Chung

Advanced electronic materials（2023）

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摘要

Neuromorphic Synapses In article number 2200554, Seyoung Kim, Yoonyoung Chung, and co-workers demonstrate a novel analog synapse device composed of two oxide semiconductor transistors. Precise control of charging and discharging in the storage node enables highly linear, symmetric, and multilevel weight updates for high-precision neural network computation.

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关键词

symmetric analog neuromorphic synapse,metal oxide semiconductor transistors,monolayer,neural network

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