(Invited) ISFET-Based Sensors

J. A. Diniz,R. R. César,Anerise de Barros,Joao Furtado de Souza, Huziel Ramos Souto,Fernando César Rufino, Rentao Massaroto,Jacobus Swart

ECS transactions（2023）

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摘要

This review presents the technological evolution of devices based on Ion Sensitive Field Effect Transistors (ISFETs), which try to go along with the Metal Oxide Semiconductor FET (MOSFET) technology. Furthermore, many examples of the applications as chemical or biological sensors with different structures (planar or 3D), conduction channels (Silicon or Graphene), and dielectric gate films (SiNx, TiOx, TaOx, and AlOx) will be discussed.

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Field-Effect Transistors

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