The growth mechanism and intriguing optical and electronic properties of few-layered HfS2

Nanoscale advances(2023)

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摘要
Due to electronic properties superior to group VIB (Mo and W) transition metal dichalcogenides (TMDs), group IVB (Hf and Zr) TMDs have become intriguing materials in next-generation nanoelectronics.
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关键词
electronic properties,optical,growth mechanism,few-layered
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