The growth mechanism and intriguing optical and electronic properties of few-layered HfS2
Nanoscale advances(2023)
摘要
Due to electronic properties superior to group VIB (Mo and W) transition metal dichalcogenides (TMDs), group IVB (Hf and Zr) TMDs have become intriguing materials in next-generation nanoelectronics.
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关键词
electronic properties,optical,growth mechanism,few-layered
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