A Simulation Study of n-ZnO/Perovskite/p-Cu₂SnS₃ Based Self-Powered Photodetector: Design and optimisation

Perovskite has been widely used in the field of optoelectronics owing to its superb optoelectronic properties. The simplest fabrication along with low-temperature handling of perovskite-based planner structures (p-i-n or n-i-p) has drawn their potential impact in organic–inorganic lead halide optoelectronic devices. The poor conductivity, stability, and high processing cost of absorber materials hinder the optical performance of the device. The sandwiching of the perovskite as absorber materials between two inorganic materials working as electron transport layer (ETL) and hole transport layer (HTL) may be a possible solution. An active absorber perovskite (CH3NH3PbI3) assisted by two n-ZnO and p-CTS materials working as an ETL and HTL, respectively, has been used to maximize the overall performance of the proposed device. The resultant optimized device shows the maximum responsivity of ∼0.35 (A/W) for a broad visible spectrum (300–900 nm), while the EQE (%) reported in the range of 25–80%.