Reliability of ferroelectric devices

The compatibility of HfO2-based fluorite-structure ferroelectrics with contemporary complementary metal-oxide-semiconductor (CMOS) technology, along with their scalability, has the potential to unleash the capabilities of ferroelectric memories for a wide range of commercial applications. Ensuring the reliable operation of these devices is an essential prerequisite for qualifying them in the high-volume semiconductor manufacturing processes for commercialization. This chapter explores the performance and reliability aspects of fluorite-structure ferroelectric materials and devices, including wakeup, fatigue, breakdown, imprint, and retention. This chapter also delves into techniques to mitigate reliability concerns, such as electrode engineering, fabrication process engineering, and doping to enhance reliability.