Role of active edge sites of atomically thin CVD-grown MoS2 layers on the enhanced visible-light photocatalytic activity

Atomically thin MoS2 layers have emerged as promising semiconductor photocatalytic materials candidate due to their unique thickness-induced physical properties. In this work, we report on the growth of MoS2 layers on sapphire substrates using a gas-phase chemical vapor deposition (CVD) approach. By tuning the CVD growth parameters, MoS2 monolayers with isolated triangular grains and continuous monolayer samples were obtained. We demonstrate that the MoS2 samples with triangular grains exhibit better photocatalytic degradation efficiency ∼ 95.39