The Rational Photomask Layout Design of Vias for Application in Double Patterning UV Photolithography
2023 International Workshop on Advanced Patterning Solutions (IWAPS)(2023)
摘要
Due to the optical diffraction limit, the resolution of conventional UV photolithography is around ~1 micron, which hinders its potential in sub-micron patterning for broader applications. Efforts have been made to overcome the diffraction limit, such as double/multiple patterning photolithography. Recently, a derivative of UV photolithography called dual-layer photolithography was reported can generate sub-micron linear patterns. In addition to linear patterns, here, we report a double patterning method to get via patterns using dual-layer photolithography. The photomask design rule for double patterning dual-layer photolithography is studied and presented in this work. For demonstration purpose, an example GDSII via file from practical application contains> 10,000 vias was used. The vias with original size of 4 μm would be reduced to 300 nm after the double patterning process.
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关键词
Photolithography,Mask,Via,Double Patterning
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