Design and Performance of High-Speed InGaAs/InGa0.351As0.755P Modified-Pin Photodiodes

Yu Li,Tonghui Li,Xiaole Gong,Kai Liu,Yongqing Huang,Xiaofeng Duan

2023 Asia Communications and Photonics Conference/2023 International Photonics and Optoelectronics Meetings (ACP/POEM)（2023）

引用 0|浏览7

暂无评分

摘要

A high-speed InGaAs/InGa 0.351 A s0.755 P modified-pin photodiode (M-PIN-PD) is presented and investigated. The 3-dB bandwidth of the M-PIN-PD with an absorber layer thickness of 800 nm is 48 GHz and a responsivity of 0.78 A/W.

查看译文

关键词

photodiodes,pin,InGaAs/InGa0.351As0.755P

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要