Comprehensive Analysis of Graphene Geometric Diodes: Role of Geometrical Asymmetry and Electrostatic Effects

A self-consistent Monte Carlo/3-D Poisson simulator has been developed to analyze the current asymmetry in graphene geometric diodes. The model couples ballistic transport in the graphene layer with 3-D electrostatics in the graphene and oxide substrate. Results are given in terms of transmission coefficients and currents at the two terminals of the diode. We prove that while the current asymmetry is mainly induced by ballistic transport in the asymmetric structure, the electrostatics plays a relevant role that tends to substantially counterbalance the geometrical effect.