Charge Movement in Back Barrier Induced Time-Dependent On-State Breakdown of GaN HEMT

Hao Yu, J. Fang, B. Vermeersch, U. Peralagu, H. Han, O. Richard, A. Alian, N. de Almeida Braga,B. Kazemi Esfeh, S. Banerjee, E. Bury, B. Parvais, N. Collaert

2023 International Electron Devices Meeting (IEDM)（2023）

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摘要

We elucidate a mechanism behind time-dependent on-state breakdown of GaN HEMTs, where the time-to-failure varies from sub-μs to hundreds of seconds. We reveal that the breakdown is sequentially caused by charge movement in the back barrier (BB), drain-corner electric field densification, impact ionization, and avalanche breakdown. Modeling of charge movement in the BB and impact ionization is key to predicting the on-state breakdown with TCAD.

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关键词

Charge Movement,GaN HEMT,Time-dependent Breakdown,Back-barrier,ON-state Breakdown,Impact Ionization,Hundreds Of Seconds,Impedance,Negatively Charged,High Voltage,Pulse Width,Hot Electrons,Carrier Generation,Trapping Effect,Lateral Field,Long-term Degradation

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