Quasi van der Waals Epitaxial Growth of GaAsSb Nanowires on Graphitic Substrate for Photonic Applications

III-V nanowires are promising building blocks for achieving superior heteroepitaxial quality. Here, we show that growth of self-catalyzed GaAsSb nanowires on graphitic substrates can be promoted by monolayer step edges or forming AlAsSb nuclei with good bonding between aluminum and the graphitic surface. With AlAsSb buffer nuclei, vertical [111]-oriented nanowires with GaAsSb-based multiple axial superlattices were grown on exfoliated graphite, which was attached to a (001) AlAs/GaAs distributed Bragg reflector (DBR) by using the simple Scotch tape method. Fabry-Perot resonance modes were observed under optical excitation at room temperature, indicating a successful monolithic integration with optical feedback from the DBR system.