Stimulated Secondary Emission of Single Photon Avalanche Diodes
arxiv(2024)
摘要
Large-area next-generation physics experiments rely on using Silicon
Photo-Multiplier (SiPM) devices to detect single photons, which trigger charge
avalanches. The noise mechanism of external cross-talk occurs when secondary
photons produced during a charge avalanche escape from an SiPM and trigger
other devices within a detector system. This work presents measured spectra of
the secondary photons emitted from the Hamamatsu VUV4 and Fondazione Bruno
Kessler VUV-HD3 SiPMs stimulated by laser light, near operational voltages. The
work describes the Microscope for the Injection and Emission of Light (MIEL)
setup, which is an experimental apparatus constructed for this purpose.
Measurements have been performed at a range of over-voltage values and
temperatures from 86 K to 293 K. The number of photons produced per avalanche
at the source are calculated from the measured spectra and determined to be
40±9 and 61±11 photons produced per avalanche for the VUV4 and VUV-HD3
respectively at 4 volts over-voltage. No significant temperature dependence is
observed within the measurement uncertainties. The overall number of photons
emitted per avalanche from each SiPM device are also reported.
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