Quantum transport of 2D Weyl VSi 2N 4-based magnetic tunnel junction: a k ? p-NEGF study

We present a systematical simulation on the room temperature strained VSi 2 N 4-based magnetic tunnel junctions (MTJs). Based on k center dot p-NEGF quantum transport modeling, the HSE06 band structure around the Fermi level was fitted by Weyl-like Hamiltonian, due to the fully spin-polarized Weyl band feature, a giant TMR ratio and perfect spin injection efficiency (SIE) were theoretically predicted in the MTJs devices. In addition, the current through the MTJs would increase when an elastic electron-phonon (e-ph) coupling effect is included in the quantum transport.