Electric field tuning of multistate and nonvolatile resistance variation in amorphous Fe₇₅Si₂₅/PMN-0.3PT (0 0 1) heterostructures

The multistate resistance states in the amorphous Fe75Si25/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN - 0.3PT) (001) heterostructure were modulated by electric fields (E). Based on the in-plane nonvolatile stress changes associated with ferroelectric domain switching in PMN-0.3PT, the widening and narrowing of surface gaps, and the fact that magnetism generally tracks the strain variation in amorphous Fe75Si25 films, the distinct four-state and nonvolatile resistance tuning near the coercive E-field are observed. Then, combining the converse magnetoelectric coupling and magnetoresistive effect, we quantify the coaction effect and equivalence relation between the E-field and magnetic fields (H) on the resistance modification. Meanwhile, another four-state resistance is obtained under the coaction of the E-fields and H-fields. All eight resistive states exhibit excellent E-field switchable behavior and stability performance at room temperature. These results provide a promising approach for exploring and designing multistate and multifield controlled spintronic memory devices.